Semiconductor device having a capacitor and method of manufacturing the same

ABSTRACT

A technique for enhancing the performance of a memory- and logic-equipped semiconductor device is provided. The semiconductor device comprises a semiconductor substrate ( 1 ), an insulating layer ( 19 ) on the semiconductor substrate ( 1 ), a plurality of contact plugs ( 16, 66 ) in the insulating layer ( 19 ), and an insulating layer ( 30 ) where capacitors ( 82 ), a plurality of contact plugs ( 25, 75 ), barrier metal layers ( 27, 87 ) and copper interconnections ( 29, 88 ) are formed. Source/drain regions ( 9 ) in the upper surface of the semiconductor substrate ( 1 ) are electrically connected to the copper interconnections ( 29 ). One of adjacent source/drain regions ( 59 ) in the upper surface of the semiconductor substrate ( 1 ) is electrically connected to the copper interconnection ( 88 ), while the other is electrically connected to the capacitor ( 82 ).

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a memory- and logic-embeddedsemiconductor device in which a memory and a logic devices are formed ona single semiconductor substrate, and also relates to a method ofmanufacturing the same.

2. Description of the Background Art

FIGS. 39 through 51 are cross-sectional views showing a sequence ofprocess steps in a conventional method of manufacturing a memory- andlogic-embedded semiconductor device. Conventional memory- andlogic-embedded semiconductor devices employ, for example, DRAMs withmemory cells having CUB (Capacitor Under Bit line) structures for theirmemory devices and salicided dual gate CMOS transistors for their logicdevices.

First, as shown in FIG. 39, by means of the well-known LOCOS isolationor trench isolation technique, an element isolation insulating film 2 isformed in the upper surface of a semiconductor substrate 1 which is, forexample, an n-type silicon substrate. Then, p-type well regions 3, 53and an n-type well region 54 are formed in the upper surface of thesemiconductor substrate 1. More specifically, the well region 53 isformed in the upper surface of the semiconductor substrate 1 in a regionwhere a memory device is to be formed (hereinafter referred to as a“memory-forming region”), and the well region 54 is formed at the bottomof the well region 53. The well region 3 is formed in the upper surfaceof the semiconductor substrate 1 in a region where a logic device is tobe formed (hereinafter referred to as a “logic-forming region”). Then,channel implantation is performed.

Then, a plurality of gate structures 61 are formed with a predetermineddistance from each other on the semiconductor substrate 1 in thememory-forming region. Each of the gate structures 61 is configured suchthat a gate insulating film 55 using for example silicon oxide film, agate electrode 56 using for example polycrystalline silicon film, and asilicon oxide film 57 using for example TEOS film are stacked in thisorder. On the semiconductor substrate 1 in the logic-forming region, aplurality of gate structures 11 are formed with a predetermined distancefrom each other. Each of the gate structures 11 is configured such thata gate insulating film 5 using for example silicon oxide film, a gateelectrode 6 using for example polycrystalline silicon film, and asilicon oxide film 7 using for example TEOS film are stacked in thisorder.

Using the gate structures 11, 61 and the element isolation insulatingfilm 2 as masks, impurities such as phosphorus or arsenic are ionimplanted in relatively low concentrations into the upper surface of thesemiconductor substrate 1. This forms n⁻ impurity regions 58 a in theupper surface of the semiconductor substrate 1 in the memory-formingregion and n⁻ impurity regions 8 a in the upper surface of thesemiconductor substrate 1 in the logic-forming region.

Then, as shown in FIG. 40, after formation of a silicon nitride filmover the entire surface by, for example, CVD, the silicon nitride filmis etched by anisotropic dry etching techniques which exhibit a highetch rate in a direction along the depth of the semiconductor substrate1. This forms sidewalls 60 on the side surfaces of the gate structures61 and sidewalls 10 on the side surfaces of the gate structures 11.

Then, using the gate structures 11 and 61, the element isolationinsulating film 2 and the sidewalls 10 and 60 as masks, impurities suchas phosphorus or arsenic are ion implanted in relatively highconcentrations into the upper surface of the semiconductor substrate 1.This forms n⁺ impurity regions 58 b in the upper surface of thesemiconductor substrate 1 in the memory-forming region and n⁺ impurityregions 8 b in the upper surface of the semiconductor substrate 1 in thelogic-forming region.

Through the above process steps, a plurality of source/drain regions 59,each consisting of the impurity regions 58 a and 58 b, are formed with apredetermined distance from each other in the upper surface of thesemiconductor substrate 1 in the memory-forming region, and the gatestructures 61 each are formed on the upper surface of the semiconductorsubstrate 1 between the adjacent source/drain regions 59. Also, aplurality of source/drain regions 9, each consisting of the impurityregions 8 a and 8 b, are formed with a predetermined distance from eachother in the upper surface of the semiconductor substrate 1 in thelogic-forming region, and the gate structures 11 each are formed on theupper surface of the semiconductor substrate 1 between the adjacentsource/drain regions 9.

For the following reason, the impurity regions 8 b and 58 b are formeddeeper than the impurity regions 8 a and 58 a. That is, during formationof a cobalt silicide film 12 later to be described on the semiconductorsubstrate 1, the cobalt silicide film 12 may be partly formed deeply.Thus, in order to avoid electrical connections between the cobaltsilicide film 12 and the well regions 3 and 53, the impurity regions 8 band 58 b are formed deeper than the impurity regions 8 a and 58 a. Atthis time, if the concentration of the impurity regions 58 b is toohigh, a leakage current flowing in a direction along the channel may beincreased, thereby causing deterioration in charge retention properties(also referred to as “refresh properties”) of the memory device. Toprevent such degradation, the concentration of the impurity regions 58 bin the memory-forming region is set to be lower than that of theimpurity regions 8 b in the logic-forming region.

Then, as shown in FIG. 41, the silicon oxide films 57 of the gatestructures 61 and the silicon oxide films 7 of the gate structures 11are removed with, for example, hydrofluoric acid.

Then, a cobalt film is formed over the entire surface using, forexample, a sputtering method. Then, for example by thermal treatmentusing a lamp annealer, cobalt is reacted with contacting silicon.Thereby, as shown in FIG. 42, the upper surface of the semiconductorsubstrate 1 is partially silicided to form the cobalt silicide films 12on the source/drain regions 9 and 59. Simultaneously, the upper surfacesof the gate electrodes 6 and 56 are silicided to form the cobaltsilicide films 12. This results in the formation of the gate structures11 each having the cobalt silicide film 12 on its gate electrode 6 andthe formation of the gate structures 61 each having the cobalt silicidefilm 12 on its gate electrode 56. Afterwards, the unreacted cobalt filmis removed.

Then, as shown in FIG. 43, an insulating layer 19 consisting of astopper film 13 and an interlayer insulation film 14 is formed on thesemiconductor substrate 1 to cover the gate structures 11 and 61. Morespecifically, the stopper film 13 is formed over the entire surface andthereafter the interlayer insulation film 14 is formed on the stopperfilm 13. The interlayer insulation film 14 is then planarized by, forexample, CMP. This forms the insulating layer 19 having a flat uppersurface on the semiconductor substrate 1. Here, the stopper film 13 isformed of, for example, silicon nitride film and the interlayerinsulation film 14 is formed of, for example, BPTEOS film.

Then, as shown in FIG. 44, contact plugs 16 and 66 are formed in theinsulating layer 19. The contact plugs 16 are electrically connectedthrough the cobalt silicide films 12 to the semiconductor substrate 1 inthe logic-forming region, and their upper surfaces are exposed from theinterlayer insulation film 14 of the insulating layer 19. The contactplugs 66 are electrically connected through the cobalt silicide films 12to the semiconductor substrate 1 in the memory-forming region, and theirupper surfaces are exposed from the interlayer insulation film 14 of theinsulating layer 19. Hereinbelow, concrete expression is given to amethod of forming the contact plugs 16 and 66.

First, contact holes 65 which extend to the cobalt silicide films 12 onthe semiconductor substrate 1 in the memory-forming region and contactholes 15 which extend to the cobalt silicide films 12 on thesemiconductor substrate 1 in the logic-forming region are formed in theinsulating layer 19.

To form the contact holes 15 and 65, a photoresist (not shown) having apredetermined opening pattern is first formed using photolithographictechniques on the interlayer insulation film 14 of the insulating layer19. Then, using the photoresist as a mask and the stopper film 13 as anetch stop, the interlayer insulation film 14 is removed by etching. Theetching at this time adopts anisotropic dry etching using a gas mixtureof C₅F₈, O₂ and Ar. The photoresist is then removed and the exposedstopper film 13 is also removed by etching. The etching at this timeadopts anisotropic dry etching using a gas mixture of CHF₃, O₂ and Ar.Thereby, the contact holes 15 which are located on the sides of the gateelectrodes 6 above the source/drain regions 9 and the contact holes 65which are located on the sides of the gate electrodes 56 above thesource/drain regions 59 are formed in the insulating layer 19 in thelogic-forming region and the memory-forming region, respectively.

Then, a multilayer film consisting of a barrier metal layer formed of,for example, titanium nitride and a high-melting metal layer formed of,for example, titanium or tungsten are formed over the entire surface.Then, the multilayer film on the upper surface of the insulating layer19 is removed by CMP. This forms the contact plugs 16 which are formedof the barrier metal layer and the high-melting metal layers and fill inthe contact holes 15, and the contact plugs 66 which are formed of thebarrier metal layer and the high-melting metal layers and fill in thecontact holes 65. Consequently, the source/drain regions 59 and thecontact plugs 66 are electrically connected to each other, and thesource/drain regions 9 and the contact plugs 16 are electricallyconnected to each other. Although not shown, contact plugs which areelectrically connected through the cobalt silicide films 12 to the gateelectrodes 56 or 6 are also formed in the insulating layer 19.

Then, as shown in FIG. 45, an insulating layer 20 consisting of astopper film 17 and an interlayer insulation film 18 is formed over theentire surface. More specifically, the stopper film 17 formed of, forexample, silicon nitride film is first formed over the entire surface.Then, the interlayer insulation film 18 is formed on the stopper film17. This forms the insulating layer 20 on the insulating layer 19 andthe contact plugs 16 and 66. The interlayer insulation film 18 is formedof, for example, BPTEOS film.

Then, as shown in FIG. 46, openings 69 are formed in the insulatinglayer 20 to expose some of the plurality of contact plugs 66, morespecifically, the contact plugs 66 which are each electrically connectedto one of the adjacent source/drain regions 59.

To form the openings 69, a photoresist (not shown) having apredetermined opening pattern is first formed on the interlayerinsulation film 18 of the insulating layer 20. Then, using thephotoresist as a mask and the stopper film 17 as an etch stop, theinterlayer insulation film 18 is removed by etching. The etching at thistime adopts anisotropic dry etching using a gas mixture of C₅F₈, O₂ andAr. The photoresist is then removed and the exposed stopper film 17 isalso removed by etching. The etching at this time adopts anisotropic dryetching using a gas mixture of CHF₃, O₂ and Ar. This forms the openings69 in the insulating layer 20.

Then, DRAM memory cell capacitors which are in contact with the exposedcontact plugs 66 are formed in the openings 69. More specifically, ametal film including a high-melting metal such as ruthenium is formedover the entire surface. The openings 69 are then covered with aphotoresist (not shown) and the metal film on the upper surface of theinterlayer insulation film 18 is removed by anisotropic dry etching.This forms, as shown in FIG. 47, lower electrodes 70 of the capacitorsincluding a high-melting metal such as ruthenium, in the openings 69.Although the metal film on the upper surface of the interlayerinsulation film 18 is removed by anisotropic dry etching, it may beremoved by CMP.

Then, after an insulation film of tantalum pentoxide and a metal filmincluding a high-melting metal such as ruthenium are stacked in thisorder over the entire surface, those films are patterned using aphotoresist. This forms, as shown in FIG. 48, dielectric films 71 of thecapacitors, which are formed of tantalum pentoxide, and upper electrodes72 of the capacitors, which include a high-melting metal such asruthenium, thereby completing the formation of the capacitors 82 in theopenings 69.

Then, as shown in FIG. 49, an insulating layer 23 is formed over theentire surface and planarized by CMP. That is, the insulating layer 23is formed on the interlayer insulation film 18 of the insulating layer20 to cover the capacitors 82. The insulating layer 23 is formed of, forexample, TEOS film and serves as an interlayer insulation film.

Then, contact holes 24 and 74 are formed in the insulating layers 20 and23. The contact holes 24 extend from the upper surface of the insulatinglayer 23 to the contact plugs 16, and the contact holes 74 extend fromthe upper surface of the insulating layer 23 to the contact plugs 66which are not in contact with the capacitors 82.

To form the contact holes 24 and 74, a photoresist (not shown) having apredetermined opening pattern is first formed on the insulating layer23. Then, using the photoresist as a mask and the stopper film 17 as anetch stop, the insulating layer 23 and the interlayer insulation film 18are removed by etching. The etching at this time adopts anisotropic dryetching using a gas mixture of C₅F₈, O₂ and Ar. The photoresist is thenremoved and the exposed stopper film 17 is also removed by etching. Theetching at this time adopts anisotropic dry etching using a gas mixtureof CHF₃, O₂ and Ar. This forms the contact holes 24 and 74. Although notshown, contact holes which extend from the upper surface of theinsulating layer 23 to the upper electrodes 72 are also formed in theinsulating layers 23, simultaneously with the contact holes 24 and 74.

Then, as shown in FIG. 50, contact plugs 25 of barrier metal layer andhigh-melting metal layer are formed to fill in the contact holes 24, andcontact plugs 75 of barrier metal layer and high-melting metal layer areformed to fill in the contact holes 74. More specifically, a multilayerfilm formed of a barrier metal layer of, for example, titanium nitride,and a high-melting metal layer of, for example, titanium or tungsten isformed over the entire surface, with the barrier metal layer under thehigh-melting metal layer. Then, the multilayer film on the upper surfaceof the insulating layer 23 is removed by CMP. This forms the contactplugs 25 which are electrically connected to the contact plugs 16 andwhose upper surfaces are exposed from the insulating layer 23, and thecontact plugs 75 which are electrically connected to the contact plugs66 not in contact with the capacitors 82 and whose upper surfaces areexposed from the insulating layer 23.

Then, as shown in FIG. 51, aluminum interconnections 127 sandwiched fromabove and below between titanium nitride layers 126 and 128 are formedon the insulating layer 23 to be electrically connected to the contactplugs 25, and aluminum interconnections 177 sandwiched from above andbelow between titanium nitride layers 176 and 178 are formed on theinsulating layer 23 to be electrically connected to the contact plugs75. The aluminum interconnections 177 are bit lines of the DRAM memorycells.

Through the aforementioned process steps, a memory device is formed inthe memory-forming region and a logic device is formed in thelogic-forming region.

The aforementioned conventional technique is disclosed in the inventors'early Japanese patent application No. 2002-090483.

Prior art reference information as to semiconductor devices with DRAMmemory cells includes Japanese laid-open patent applications No.8-107188, 11-307742 and 2000-307085.

As above described, it has been difficult in the conventional techniquesto reduce the interconnect resistance in the semiconductor device sincealuminum interconnections are formed in the upper layer. Accordingly, ithas been difficult to improve the performance of the memory deviceformed in the memory-forming region and the logic device formed in thelogic-forming region.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a technique that allowsenhancement of the performance of a memory- and logic-equippedsemiconductor device.

According to an aspect of the present invention, a semiconductor deviceincludes a semiconductor substrate, first and second insulating layers,first through fifth contact plugs, a capacitor, and first and secondcopper interconnections. The semiconductor substrate has a first regionwhere a memory device is formed and a second region where a logic deviceis formed. The first insulating layer is formed on the semiconductorsubstrate. The first and second contact plugs are formed in the firstinsulating layer to be electrically connected to the semiconductorsubstrate in the first region and their upper surfaces are exposed fromthe first insulating layer. The third contact plug is formed in thefirst insulating layer to be electrically connected to the semiconductorsubstrate in the second region and its upper surface is exposed from thefirst insulating layer. The second insulating layer is formed on thefirst insulating layer and on the first through third contact plugs. Thecapacitor is formed in the second insulating layer to be electricallyconnected to the first contact plug. The fourth and fifth contact plugsare formed in the second insulating layer to be electrically connectedto the second and third contact plugs, respectively. The first andsecond copper interconnections are formed in the second insulating layerto be electrically connected to the fourth and fifth contact plugs,respectively.

According to another aspect of the present invention, a method ofmanufacturing a semiconductor device includes the following steps (a) to(k). The step (a) is to prepare a semiconductor substrate having a firstregion where a memory device is formed and a second region where a logicdevice is formed. The step (b) is to form a first insulating layer onthe semiconductor substrate. The step (c) is to form first through thirdcontact plugs in the first insulating layer, the first and secondcontact plugs being electrically connected to the semiconductorsubstrate in the first region and having their upper surfaces exposedfrom the first insulating layer, the third contact plug beingelectrically connected to the semiconductor substrate in the secondregion and having its upper surface exposed from the first insulatinglayer. The step (d) is to form a second insulating layer on the firstinsulating layer and on the first through third contact plugs. The step(e) is to form a first opening in the second insulating layer to exposethe first contact plug. The step (f) is to form a capacitor, which is incontact with the first contact plug, in the first opening. The step (g)is to form a third insulating layer on the second insulating layer tocover the capacitor. The step (h) is to form fourth and fifth contactplugs in the second and third insulating layers, the fourth contact plugbeing electrically connected to the second contact plug and having itsupper surface exposed from the third insulating layer, the fifth contactplug being electrically connected to the third contact plug and havingits upper surface exposed from the third insulating layer. The step (i)is to form a fourth insulating layer on the third insulating layer andon the fourth and fifth contact plugs. The step (j) is to form secondand third openings in the fourth insulating layer to expose the fourthand fifth contact plugs, respectively. The step (k) is to form a firstcopper interconnection which fills in the second opening and iselectrically connected to the fourth contact plug, and a second copperinterconnection which fills in the third opening and is electricallyconnected to the fifth contact plug.

The use of copper interconnections as upper interconnections in thefirst and second regions can reduce wiring resistance as compared withthe use of aluminum interconnections as the upper interconnections. Thisenhances the performance of the memory- and logic-equipped semiconductordevice.

According to a still another aspect of the present invention, a methodof manufacturing a semiconductor device includes the following steps (a)to (i). The step (a) is to prepare a semiconductor substrate having afirst region where a memory device is formed and a second region where alogic device is formed. The step (b) is to form a first insulating layeron the semiconductor substrate. The step (c) is to form first throughthird contact plugs in the first insulating layer, the first and secondcontact plugs being electrically connected to the semiconductorsubstrate in the first region and having their upper surfaces exposedfrom the first insulating layer, the third contact plug beingelectrically connected to the semiconductor substrate in the secondregion and having its upper surface exposed from the first insulatinglayer. The step (d) is to form a second insulating layer on the firstinsulating layer and on the first through third contact plugs. The step(e) is to form a first opening in the second insulating layer to exposethe first contact plug. The step (f) is to form a capacitor, which is incontact with the first contact plug, in the first opening. The step (g)is to form a third insulating layer on the second insulating layer tocover the capacitor. The step (h) is to form a first contact holeextending to the second contact plug and a second contact hole extendingto the third contact plug, in the second and third insulating layers,and to form a second opening connected with the first contact hole and athird opening connected with the second contact hole in the thirdinsulating layer. The step (i) is to fill the first contact hole and thesecond opening at one time with a copper material to form a fourthcontact plug which fills in the first contact hole and a first copperinterconnection which fills in the second opening, and to fill thesecond contact hole and the third opening at one time with a coppermaterial to form a fifth contact plug which fills in the second contacthole and a second copper interconnection which fills in the thirdopening.

Since the first contact hole and the second opening are filled at onetime with the copper material, the fourth contact plug and the firstcopper interconnection can be formed at the same time. Similarly, sincethe second contact hole and the third opening are filled at one timewith the copper material, the fifth contact plug and the second copperinterconnection can be formed at the same time. This reduces the numberof manufacturing steps and achieves excellent mass productivity ascompared with the case where the contact plugs and the copperinterconnections are formed at different steps.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a semiconductor devicestructure according to a first preferred embodiment of the presentinvention;

FIGS. 2 and 3 are cross-sectional views showing a sequence of processsteps in a semiconductor device manufacturing method according to thefirst preferred embodiment of the present invention;

FIGS. 4 through 11 are cross-sectional views showing a sequence ofprocess steps in a semiconductor device manufacturing method accordingto a second preferred embodiment of the present invention;

FIGS. 12 through 16 are cross-sectional views showing a sequence ofprocess steps in a semiconductor device manufacturing method accordingto a third preferred embodiment of the present invention;

FIGS. 17 through 28 are cross-sectional views showing a sequence ofprocess steps in a semiconductor device manufacturing method accordingto a fourth preferred embodiment of the present invention;

FIGS. 29 through 38 are cross-sectional views showing a sequence ofprocess steps in a semiconductor device manufacturing method accordingto a fifth preferred embodiment of the present invention; and

FIGS. 39 through 51 are cross-sectional views showing a sequence ofprocess steps in a conventional semiconductor device manufacturingmethod.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

First Preferred Embodiment

FIG. 1 is a cross-sectional view showing the structure of asemiconductor device according to a first preferred embodiment of thepresent invention. The semiconductor device of the first preferredembodiment is a memory- and logic-equipped semiconductor device whichemploys, for example, a DRAM with memory cells having CUB structures forits memory device and a salicided dual gate CMOS transistor for itslogic device.

As shown in FIG. 1, the semiconductor device according to the firstpreferred embodiment comprises a semiconductor substrate 1, aninsulating layer 19 which is formed on the semiconductor substrate 1 andconsists of a stopper film 13 and an interlayer insulation film 14, aplurality of contact plugs 16 and 66 formed in the insulating layer 19,and an insulating layer 30 consisting of insulting layers 20, 23 and 28.The semiconductor device further comprises capacitors 82, a plurality ofcontact plugs 25 and 75, and copper interconnections 29 and 88, all ofwhich are formed in the insulating layer 30.

The semiconductor substrate 1 is, for example, an n-type siliconsubstrate in the upper surface of which an element isolation insulatingfilm 2 is formed. Also, a p-type well region 3 is formed in the uppersurface of the semiconductor substrate 1 in a logic-forming region, anda p-type well region 53 is formed in the upper surface of thesemiconductor substrate 1 in a memory-forming region. At the bottom ofthe well region 53, an n-type well region 54 is formed.

In the upper surface of the well region 3, a plurality of source/drainregions 9 are formed with a predetermined distance from each other, andin the upper surface of the well region 53, a plurality of source/drainregions 59 are formed with a predetermined distance from each other.

On the semiconductor substrate 1 in the memory-forming region, aplurality of gate structures 61 are formed with a predetermined distancefrom each other. Each of the gate structures 61 is configured such thata gate insulating film 55 using for example silicon oxide film, a gateelectrode 56 using for example polycrystalline silicon film, and acobalt silicide film 12 are stacked in this order. The gate structures61 each are formed between the adjacent source/drain regions 59 on theupper surface of the semiconductor substrate 1 and have sidewalls 60 ontheir side surfaces.

On the semiconductor substrate 1 in the logic-forming region, aplurality of gate structures 11 are formed with a predetermined distancefrom each other. Each of the gate structures 11 is configured such thata gate insulating film 5 using for example silicon oxide film, a gateelectrode 6 using for example polycrystalline silicon film, and thecobalt silicide film 12 are stacked in this order. The gate structures11 each are formed between the adjacent source/drain regions 9 on theupper surface of the semiconductor substrate 1 and have sidewalls 10 ontheir side surfaces.

The cobalt silicide film 12 is also formed on each of the source/drainregions 9 and 59. The contact plugs 66 have their upper surfaces exposedfrom the insulating layer 19 and are electrically connected to thesemiconductor substrate 1 in the memory-forming region, morespecifically, the source/drain regions 59. The contact plugs 16 havetheir upper surfaces exposed from the insulating layer 19 and areelectrically connected to the semiconductor substrate 1 in thelogic-forming region, more specifically, the source/drain regions 9.

The insulating layer 30 is formed on the insulating layer 19 and thecontact plugs 16 and 66. The capacitors 82 are electrically connected tosome of the plurality of contact plugs 66, more specifically, thecontact plugs 66 which are each electrically connected to one of theadjacent source/drain regions 59.

The contact plugs 25 are electrically connected to the contact plugs 16,and the contact plugs 75 are electrically connected to the contact plugs66 which are not in electrical contact with the capacitors 82. Thecopper interconnections 29 are electrically connected through barriermetal layers 27 to the contact plugs 25, and the copper interconnections88 are electrically connected through barrier metal layers 87 to thecontact plugs 75. The copper interconnections 88 are bit lines of theDRAM memory cells and located above the capacitors 82.

As above described, the semiconductor device according to the firstpreferred embodiment comprises the copper interconnections as its upperinterconnections in the memory-forming region and in the logic-formingregion and therefore can reduce wiring resistance as compared with theconventional semiconductor device (see FIG. 51) which employs aluminuminterconnections for the upper interconnections. Thus, the performanceof the memory- and logic-equipped semiconductor device can be enhanced.

Next, a method of manufacturing the semiconductor device shown in FIG. 1will be described. FIGS. 2 and 3 are cross-sectional views showing asequence of process steps in a semiconductor device manufacturing methodaccording to the first preferred embodiment. Hereinbelow, the method ofmanufacturing the semiconductor device shown in FIG. 1 is described withreference to FIGS. 2 and 3.

First, the structure shown in FIG. 50 is formed by using thepreviously-described conventional semiconductor device manufacturingmethod.

Then, as shown in FIG. 2, the insulating layer 28 of, for example,silicon oxide film is formed over the entire surface. That is, theinsulating layer 28 is formed on the insulating layer 23 and the contactplugs 25 and 75.

Then, a photoresist (not shown) having a predetermined pattern is formedon the insulating layer 28 and, using the photoresist as a mask, theinsulating layer 28 is removed by etching. This forms, as shown in FIG.3, openings 26 and 86 which respectively expose the contact plugs 25 and75, in the insulating layer 28.

Then, a barrier metal layer of, for example, tantalum nitride is formedover the entire surface and a copper material is formed over the entiresurface to fill in the openings 26 and 86. The barrier metal layer andthe copper material on the upper surface of the insulating layer 28 arethen removed by, for example, CMP. This forms the copperinterconnections 29 which fill in the openings 26 and which areelectrically connected through the barrier metal layers 27 to thecontact plugs 25, and the copper interconnections 88 which fill in theopenings 86 and which are electrically connected through the barriermetal layers 87 to the contact plugs 66 not in electrical contact withthe capacitors 82, thereby completing the structure shown in FIG. 1.

Through the aforementioned process steps, a memory device is formed inthe memory-forming region and a logic device is formed in thelogic-forming region.

As above described, the semiconductor device manufacturing methodaccording to the first preferred embodiment employs the copperinterconnections for its interconnections formed in the upper parts ofthe memory-forming region and the logic-forming region and therefore canreduce wiring resistance as compared with the conventional semiconductordevice manufacturing method which employs aluminum interconnections forthe upper interconnections. Thus, the performance of the memory- andlogic-equipped semiconductor device can be enhanced.

Second Preferred Embodiment

In the aforementioned semiconductor device manufacturing methodaccording to the first preferred embodiment, in order to form theopenings 69 (see FIG. 46) or the contact holes 15, 65, 24 and 74 (seeFIGS. 44 and 49), the interlayer insulation films 14 and 18 are etchedusing the stopper films 13 and 17 as etch stops and thereafter, thestopper films 13 and 17 are etched. At this time, if the interlayerinsulation films 14 and 18 are etched using the aforementioned gasmixture, a fluorocarbon (CxFy) deposition film is deposited on the uppersurfaces of the stopper films 13 and 17. The formation of the depositionfilm improves etch selectivity between the interlayer insulation films14, 18 and the stopper films 13, 17.

However, if the stopper films 13 and 17 are etched with the depositionfilm remaining thereon, the stopper films 13 and 17 cannot properly beetched since the deposition film serves as a mask. To avoid thisproblem, before the etching of the stopper films 13 and 17, thedeposition film is removed in the process of removing a photoresist.

In this way, in order to form the openings 69 or the contact holes 15,65, 24 and 74, the semiconductor device manufacturing method accordingto the first preferred embodiment requires the process of etching theinterlayer insulation films 14, 18 and the process of etching thestopper films 13 and 17, and also requires, between those processes, theprocess of removing a photoresist. Thus, replacement of manufacturingequipment, e.g., replacement of etching equipment by ashing equipment orvice versa, is necessary for formation of the openings 69 or the contactholes 15, 65, 24 and 74. As a result, the manufacture of thesemiconductor device takes time.

The second preferred embodiment and a third preferred embodiment laterto be described provide manufacturing methods that allow reduction inthe semiconductor device manufacturing time as compared with theaforementioned manufacturing method according to the first preferredembodiment.

FIGS. 4 through 11 are cross-sectional views showing a sequence ofprocess steps in a semiconductor device manufacturing method accordingto the second preferred embodiment of the present invention. Thesemiconductor device according to the second preferred embodiment is amemory- and logic-equipped semiconductor device and employs, forexample, a DRAM with memory cells having CUB structures for its memorydevice and a salicided dual gate CMOS transistor for its logic device.Hereinbelow, the semiconductor device manufacturing method according tothe second preferred embodiment is described with reference to FIGS. 4through 11.

First, the structure shown in FIG. 42 is formed by using thepreviously-described conventional semiconductor device manufacturingmethod.

Then, as shown in FIG. 4, the insulating layer 19 consisting of thestopper films 13, 17 and the interlayer insulation film 14 is formed onthe semiconductor substrate 1 to cover the gate structures 11 and 61.More specifically, the stopper film 13 is formed over the entire surfaceand the interlayer insulation film 14 is formed on the stopper film 13.Then, the stopper film 17 is formed on the interlayer insulation film14.

While in the aforementioned first preferred embodiment the stopper film17 is contained in the insulating layer 20, the stopper film 17 in thissecond preferred embodiment is contained in the insulating layer 19, notin the insulating layer 20 later to be described. That is, theinsulating layer 19 contains the stopper film 17 in its upper part, sothe insulating layer 20 later to be described does not contain thestopper film 17.

Then, as shown in FIG. 5, the contact plugs 16 and 66 are formed in theinsulating layer 19. The contact plugs 16 are electrically connectedthrough the cobalt silicide films 12 to the semiconductor substrate 1 inthe logic-forming region, and their upper surfaces are exposed from thestopper film 17 of the insulating layer 19. The contact plugs 66 areelectrically connected through the cobalt silicide films 12 to thesemiconductor substrate 1 in the memory-forming region, and their uppersurfaces are exposed from the stopper film 17 of the insulating layer19. Hereinbelow, concrete expression is given to a method of forming thecontact plugs 16 and 66.

First, the contact holes 65 which extend to the cobalt silicide films 12on the semiconductor substrate 1 in the memory-forming region, and thecontact holes 15 which extend to the cobalt silicide films 12 on thesemiconductor substrate 1 in the logic-forming region are formed in theinsulating layer 19.

To form the contact holes 15 and 65, a photoresist (not shown) having apredetermined opening pattern is first formed by photolithographictechniques on the stopper film 17 of the insulating layer 19. Then,using the photoresist as a mask, the stopper film 17 is removed byetching. The etching at this time adopts, for example, anisotropic dryetching using a gas mixture of CHF₃, O₂ and Ar.

Then, etching conditions such as a gas to be used is altered and theinterlayer insulation film 14 of the insulating layer 19 is etched usingagain the photoresist on the stopper film 17 as a mask. At this time,the stopper film 13 serves as an etch stop. The etching at this timeuses, for example, a gas mixture of C₅F₈, O₂ and Ar.

After removal of the photoresist, etching is performed on the entiresurface to remove the exposed stopper film 13. The etching at this timeadopts anisotropic dry etching using a gas mixture of CHF₃, O₂ and Ar.Thereby, the contact holes 15 which are located on the sides of the gateelectrodes 6 and above the source/drain regions 9 and the contact holes65 which are located on the sides of the gate electrodes 56 and abovethe source/drain regions 59 are formed in the insulating layer 19 in thelogic-forming region and the memory-forming region, respectively. In theetching of the stopper film 13, the stopper film 17 is also etched sinceetching is performed on the entire surface. Thus, the thickness of thestopper film 17 should be set so that the stopper film 17 of apredetermined thickness remains after the completion of the etching ofthe stopper film 13.

Then, a multilayer film formed of a barrier metal layer of, for example,titanium nitride and a high-melting metal layer of, for example,titanium or tungsten is formed over the entire surface. Then, themultilayer film on the upper surface of the insulating layer 19 isremoved by CMP. This forms the contact plugs 16 which are formed of thebarrier metal layer and the high-melting metal layer and fill in thecontact holes 15, and the contact plugs 66 which are formed of thebarrier metal layer and the high-melting metal layer and fill in thecontact holes 65. Consequently, electrical connections are providedbetween the source/drain regions 59 and the contact plugs 66 and betweenthe source/drain regions 9 and the contact plugs 16. Although not shown,contact plugs which are electrically connected through the cobaltsilicide films 12 to the gate electrodes 56 or 6 are also formed in theinsulating layer 19.

Then, as shown in FIG. 6, the insulating layer 20 consisting of theinterlayer insulation film 18 is formed over the entire surface. Thatis, the insulating layer 20 or the interlayer insulation film 18 isformed on the stopper film 17 of the insulating layer 19 and the contactplugs 16 and 66. Then, a photoresist (not shown) having a predeterminedopening pattern is formed on the insulating layer 20 and, using thephotoresist as a mask and the stopper film 17 and the contact plugs 66as etch stops, the insulating layer 20 is removed by etching. Thephotoresist is then removed. The etching at this time adopts anisotropicdry etching using a gas mixture of C₅F₈, O₂ and Ar. Thereby, theopenings 69 are formed in the insulating layer 20 to expose the contactplugs 66 which are each electrically connected to one of the adjacentsource/drain regions 59.

In the etching technique employed for removal of the insulating layer20, the contact plugs 66 are hard to etch and, in general, etchselectivity between the insulating layer 20 and the contact plugs 66 ishigh enough. Thus, like the stopper film 17, the contact plugs 66 canalso be used as etch stops to prevent the openings 69 from extending tothe gate electrodes 56 or to the semiconductor substrate 1.

Then, the DRAM memory cell capacitors 82 which are in contact with thecontact plugs 66 are formed in the openings 69. More specifically, ametal film including a high-melting metal such as ruthenium is firstformed over the entire surface. Then, the openings 69 are covered with aphotoresist (not shown) and the metal film on the upper surface of theinsulating layer 20 is removed by anisotropic dry etching. This forms,as shown in FIG. 7, the lower electrodes 70 of the capacitors in theopenings 69. Although the metal film on the upper surface of theinsulating layer 20 is removed by anisotropic dry etching, it may beremoved by CMP.

Then, after an insulation film of tantalum pentoxide and a metal filmincluding a high-melting metal such as ruthenium are stacked in thisorder over the entire surface, those films are patterned using aphotoresist. This forms, as shown in FIG. 8, the dielectric films 71 andthe upper electrodes 72 of the capacitors, thereby completing theformation of the capacitors 82 in the openings 69.

Then, as shown in FIG. 9, the insulating layer 23 is formed over theentire surface and planarized by CMP. That is, the insulating layer 23is formed on the insulating layer 20 to cover the capacitors 82. Also,the contact holes 24 and 74 are formed in the insulating layers 20 and23. More specifically, a photoresist (not shown) having a predeterminedopening pattern is formed on the insulating layer 20 and, using thephotoresist as a mask and the stopper film 17 and the contact plugs 16,66 as etch stops, the insulating layers 20 and 23 are removed byetching. The photoresist is then removed. The etching at this timeadopts anisotropic dry etching using a gas mixture of C₅F₈, O₂ and Ar.

This forms the contact holes 24 which extend from the upper surface ofthe insulating layer 23 to the contact plugs 16, and the contact holes74 which extend from the upper surface of the insulating layer 23 to thecontact plugs 66 not in contact with the capacitors 82.

In the etching technique employed for removal of the insulating layers20 and 23, the contact plugs 16 and 66 are hard to etch and, in general,etch selectivity between the insulating layers 20, 23 and the contactplugs 16, 66 is high enough. Thus, the contact plugs 16 and 66 can beused as etch stops. Although not shown, contact holes which extend fromthe upper surface of the insulating layer 23 to the upper electrodes 72are also formed in the insulating layer 23.

Then, a multilayer film formed of a barrier metal layer of, for example,titanium nitride and a high-melting metal layer of, for example,titanium or tungsten is formed over the entire surface. Then, themultilayer film on the upper surface of the insulating layer 23 isremoved by CMP. This forms, as shown in FIG. 10, the contact plugs 25which fill in the contact holes 24 and the contact plugs 75 which fillin the contact holes 74.

Then, the insulating layer 28, the openings 26 and 86, the barrier metallayers 27 and 87, and the copper interconnections 29 and 88 are formedaccording to the manufacturing method identical to that in theaforementioned first preferred embodiment. This results in the structureshown in FIG. 11.

Through the above process steps, a memory device is formed in thememory-forming region and a logic device is formed in the logic-formingregion.

As above described, in the semiconductor device manufacturing methodaccording to the second preferred embodiment, since the contact plugs 16and 66 are formed also in the stopper film 17, the stopper film 17 isnot to be etched at the time of formation of the openings 69 or thecontact holes 24 and 74. Although the method according to the secondpreferred embodiment requires replacement of etching equipment by ashingequipment since the photoresist needs to be removed after etching of theinterlayer insulation films, unlike the aforementioned manufacturingmethod according to the first preferred embodiment, it does not requirereplacement of ashing equipment by etching equipment for formation ofthe openings 69 or the contact holes 24 and 74. This reduces the timerequired to form the openings 69 or the contact holes 24 and 74.Consequently, the semiconductor device manufacturing time can be madeshorter than in the manufacturing method according to the firstpreferred embodiment.

A comparison between the process of forming the contact holes 15, 65 inthe second preferred embodiment (see FIG. 5) and that in the firstpreferred embodiment (see FIG. 44) indicates that the second preferredembodiment further requires the process of etching the stopper film 17.However, a process subsequent to the etching of the stopper film 17 isthe process of etching the interlayer insulation film 14; therefore,without necessitating replacement of manufacturing equipment, only theetching conditions should be altered to switch from the process ofetching the stopper film 17 to the process of etching the interlayerinsulation film 14. Accordingly, an increase in the manufacturing timedue to addition of the process step of etching the stopper film 17becomes so small as compared with the aforementioned reduction in themanufacturing time and therefore have little effect on the totalmanufacturing time.

Third Preferred Embodiment

FIGS. 12 through 16 are cross-sectional views showing a sequence ofprocess steps in a semiconductor manufacturing method according to athird preferred embodiment of the present invention. The semiconductordevice according to the third preferred embodiment is a memory- andlogic-equipped semiconductor device and employs, for example, a DRAMwith memory cells having CUB structures for its memory device and asalicided dual gate CMOS transistor for its logic device. Hereinbelow,the semiconductor device manufacturing method according to the thirdpreferred embodiment is described with reference to FIGS. 12 through 16.

First, the structure shown in FIG. 44 is formed by using thepreviously-described conventional semiconductor device manufacturingmethod.

Then, as shown in FIG. 12, the insulating layer 20 consisting of theinterlayer insulation film 18 is formed over the entire surface. Thatis, the insulating layer 20 is formed on the interlayer insulation film14 of the insulating layer 19 and the contact plugs 16 and 66. While theinsulating layer 20 in the aforementioned first preferred embodimentcontains the stopper film 17, the insulating layer 20 in the thirdpreferred embodiment does not contain the stopper film 17.

Then, a photoresist (not shown) having a predetermined opening patternis formed on the insulating layer 20 and, using the photoresist as amask, the insulating layer 20 is removed by etching. The photoresist isthen removed. The etching at this time adopts anisotropic dry etchingusing a gas mixture of C₅F₈, O₂ and Ar. Thereby, the openings 69 areformed in the insulating layer 20 to expose the contact plugs 16 whichare each electrically connected to one of the adjacent source/drainregions 59.

In the etching technique employed for removal of the insulating layer20, the contact plugs 66 are hard to etch and, in general, etchselectivity between the insulating layer 20 and the contact plugs 66 ishigh enough. Further, the amount of overetch of the insulating layer 20can be reduced by improving uniformity in the thickness of theinsulating layer 20 and stabilizing the etch rate of the insulatinglayer 20. This prevents the openings 69 from extending to the gateelectrodes 56 or to the semiconductor substrate 1.

Then, the DRAM memory cell capacitors 82 which are in contact with thecontact plugs 66 are formed in the openings 69. More specifically, ametal film including a high-melting metal such as ruthenium is firstformed over the entire surface. Then, the openings 69 are covered with aphotoresist (not shown) and the metal film on the upper surface of theinsulating layer 20 is removed by anisotropic dry etching. This forms,as shown in FIG. 13, the lower electrodes 70 of the capacitors in theopenings 69. Although the metal film on the upper surface of theinsulating layer 20 is removed by anisotropic dry etching, it may beremoved by CMP.

Then, after an insulation film of tantalum pentoxide and a metal filmincluding a high-melting metal such as ruthenium are stacked in thisorder over the entire surface, those films are patterned using aphotoresist. This forms, as shown in FIG. 14, the dielectric films 71and the upper electrodes 72 of the capacitors, thereby completing theformation of the capacitors 82 in the openings 69.

Then, as shown in FIG. 15, the insulating layer 23 is formed over theentire surface and planarized by CMP. That is, the insulating layer 23is formed on the insulating layer 20 to cover the capacitors 82. Then,the contact holes 24 and 74 are formed in the insulating layers 20 and23. More specifically, a photoresist (not shown) having a predeterminedopening patter is formed on the insulating layer 23 and, using thephotoresist as a mask, the insulating layers 20 and 23 are removed byetching. The photoresist is then removed. The etching at this timeadopts anisotropic dry etching using a gas mixture of C₅F₈, O₂ and Ar.

This forms the contact holes 24 which extend from the upper surface ofthe insulating layer 23 to the contact plugs 16, and the contact holes74 which extend from the upper surface of the insulating layer 23 to thecontact plugs 66.

In the etching technique employed for removal of the insulating layers20 and 23, the contact plugs 16 and 66 are hard to etch and, in general,etch selectivity between the insulating layers 20, 23 and the contactplugs 16, 66 is high enough. Further, the amounts of overetch of theinsulating layers 20 and 23 can be reduced by improving uniformity inthe thicknesses of the insulating layers 20, 23 and stabilizing the etchrates of the insulating layers 20, 23. Thus, even if the contact holes24 and 74 are formed in misaligned positions, it is possible to preventthe contact holes 24 and 74 from extending to the gate electrodes 6 and56 or to the semiconductor substrate 1. Although not shown, contactholes which extend from the upper surface of the insulating layer 23 tothe upper electrodes 72 are also formed in the insulating layer 23.

Then, the contact plugs 25 and 75, the insulating layer 28, the openings26 and 86, the barrier metal layers 27 and 87, and the copperinterconnections 29 and 88 are formed according to the manufacturingmethod identical to that in the second preferred embodiment. Thisresults in the structure shown in FIG. 16.

Through the above process steps, a memory device is formed in thememory-forming region and a logic device is formed in the logic-formingregion.

As above described, in the semiconductor device manufacturing methodaccording to the third preferred embodiment, the stopper film 17 is notformed, that is, the interlayer insulation film 18 is formed directly onthe insulating layer 19 and the contact plugs 16 and 66. Thus, theprocess of etching a stopper film is not performed for formation of theopenings 69 or the contact holes 24 and 74. In the third preferredembodiment, replacement of etching equipment by ashing equipment isnecessary since the photoresist needs to be removed after etching of theinterlayer insulation films; however, replacement of ashing equipment byetching equipment is unnecessary for the formation of the openings 69 orthe contact holes 24 and 74. This manufacturing method can thereforereduce the time required to form the openings 69 or the contact holes 24and 74 as compared with the manufacturing method according to the firstpreferred embodiment which requires replacement of ashing equipment byetching equipment in the above case. Consequently, the semiconductordevice manufacturing time can be made shorter than in the manufacturingmethod according to the first preferred embodiment.

Further, unlike the semiconductor device manufacturing methods accordingto the first and second preferred embodiments, the method according tothe third preferred embodiment does not require the process of formingthe stopper film 17 and therefore can further shorten the manufacturingtime.

Fourth Preferred Embodiment

In the aforementioned semiconductor device manufacturing methodsaccording to the first through third preferred embodiments, for exampleas shown in FIG. 5, only the cobalt silicide films 12 exist between theupper surfaces of the gate electrodes 6 and 56 and the stopper film 13,with no insulating film therebetween. Thus, the contact holes 15 and 65cannot be self-aligned to the gate electrodes 6 and 56, respectively.More specifically, if the contact holes 15 are formed above the gateelectrodes 6 by, for example, misalignment, the cobalt silicide films 12on the gate electrodes 6 are exposed and thereby the gate electrodes 6and the contact plugs 16 are short-circuited. Similarly, if the contactholes 65 are formed above the gate electrodes 56, the cobalt silicidefilms 12 on the gate electrodes 56 are exposed and thereby the gateelectrodes 56 and the contact plugs 66 are short-circuited.

In order to avoid short circuits between the contact plugs 16 and thegate electrodes 6 or between the contact plugs 66 and the gateelectrodes 56, it is necessary to determine a design value for adistance m (see FIG. 5) between the contact holes 15 and the gateelectrodes 6 or between the contact holes 65 and the gate electrodes 56in consideration of (1) alignment accuracy; (2) variations in thedimensions of the contact holes; and (3) the dimensions of theinsulation film large enough to ensure insulation between the gateelectrodes and the contact plugs. Thus, if the contact holes 15 and 65cannot be self-aligned to the gate electrodes 6 and 56, it is difficultin the manufacturing methods according to the first through thirdpreferred embodiments to reduce the dimensions of the memory-formingregion and the logic-forming region. This results in difficulty inreducing the dimensions of the semiconductor device.

The fourth preferred embodiment provides a semiconductor devicemanufacturing method that allows reduction in the dimensions of thememory- and logic-equipped semiconductor device even if the contactholes cannot be self-aligned to the gate electrodes.

First of all, the semiconductor device manufacturing method according tothe fourth preferred embodiment of the present invention, which isassociated with the first preferred embodiment, will be described withreference to FIGS. 17 through 21.

First, the structure shown in FIG. 43 is formed by using thepreviously-described conventional semiconductor device manufacturingmethod.

Then, as shown in FIG. 17, according to the manufacturing methodidentical to that in the first preferred embodiment, the contact holes65 which extend to the cobalt silicide films 12 on the semiconductorsubstrate 1 in the memory-forming region, and the contact holes 15 whichextend to the cobalt silicide films 12 on the semiconductor substrate 1in the logic-forming region are formed in the insulating layer 19.Although not shown, contact holes which extend to the cobalt silicidefilms 12 on the gate electrodes 6 and 65 are also formed in theinsulating layer 19, simultaneously with the contact holes 15 and 65.

Then, an insulation film of, for example, silicon nitride film is formedover the entire surface and anisotropically etched from the uppersurface. This forms, as shown in FIG. 18, insulation films 35 of, forexample, silicon nitride film on the side surfaces of the contact holes15, 65 and the contact holes (not shown) located above the gateelectrodes 6 and 56.

Then, as shown in FIG. 19, the contact plugs 16 are formed to fill inthe contact holes 15 and the contact plugs 66 are formed to fill in thecontact holes 65. The contact plugs 16 are electrically connectedthrough the cobalt silicide films 12 to the semiconductor substrate 1 inthe logic-forming region, and their upper surfaces are exposed from theinterlayer insulation film 14 of the insulating layer 19. The contactplugs 66 are electrically connected through the cobalt silicide films 12to the semiconductor substrate 1 in the memory-forming region, and theirupper surfaces are exposed from the interlayer insulation film 14.Hereinbelow, concrete expression is given to a method of forming thecontact plugs 16 and 66.

First, a multilayer film formed of a barrier metal layer of, forexample, titanium nitride and a high-melting metal layer of, forexample, titanium or tungsten is formed over the entire surface, withthe barrier metal layer under the high-melting metal layer. Then, themultilayer film on the upper surface of the insulating layer 19 isremoved by CMP. This forms the contact plugs 16 which are formed of thebarrier metal layer and the high-melting metal layer and which fill inthe contact holes 15, and the contact plugs 66 which are formed of thebarrier metal layer and the high-melting metal layer and which fill inthe contact holes 65. Consequently, electrical connections are providedbetween the source/drain regions 59 and the contact plugs 66 and betweenthe source/drain regions 9 and the contact plugs 16. In the formation ofthe contact plugs 16 and 66, contact plugs which fill in the contactholes located above the gate electrodes 6 and 56 are also formedsimultaneously. As a result, the contact plugs which are electricallyconnected through the cobalt silicide films 12 to the gate electrodes 6and 56 are formed in the insulating layer 19.

Then, as shown in FIG. 20, the insulating layer 20 consisting of thestopper film 17 and the interlayer insulation film 18 is formed over theentire surface. More specifically, the stopper film 17 is first formedover the entire surface, and the interlayer insulation film 18 is formedon the stopper film 17. Thereby, the insulating layer 20 is formed onthe insulating layer 19 and on the contact plugs 16 and 66.

Then, according to the manufacturing method identical to that in theaforementioned first preferred embodiment, the insulating layers 23 and28, the capacitors 82, the contact holes 24 and 74, the contact plugs 25and 75, the openings 26 and 86, the barrier metal layers 27 and 87, andthe copper interconnections 29 and 88 are formed. This results in thestructure shown in FIG. 21.

As above described, in the semiconductor device manufacturing methodaccording to the fourth preferred embodiment associated with the firstpreferred embodiment, the insulation films 35 are formed on the sidesurfaces of the contact holes 15 and 65 (see FIG. 18) and thereafter,the contact plugs 16 and 66 are formed to fill in the contact holes 15and 65, respectively (see FIG. 19).

Thus, the insulation film 35 is provided between the contact holes 15and the gate electrodes 6 and between the contact holes 65 and the gateelectrodes 56. From this, if the thickness of the insulation films 35 isset to a dimension large enough to ensure insulation between the gateelectrodes 6 and the contact plugs 16, the design value for the distancem (see FIG. 19) between the contact holes 15 and the gate electrodes 6can be determined in consideration of only the aforementioned (1)alignment accuracy and (2) variations in the dimensions of the contactholes, without necessitating consideration of (3) the dimensions of theinsulation film large enough to ensure insulation between the gateelectrodes and the contact plugs. In other words, it is not necessary toconsider insulation between the gate electrodes 6 and the contact plugs16 when determining the design value for the distance m between thecontact holes 15 and the gate electrodes 6.

Similarly, if the thickness of the insulation films 35 is set to adimension large enough to ensure insulation between the gate electrodes56 and the contact plugs 66, the design value for the distance m betweenthe gate electrodes 56 and the contact holes 65 can be determinedwithout consideration of the aforementioned (3) dimensions of theinsulation film large enough to ensure insulation between the gateelectrodes and the contact plugs.

Accordingly, even if the contact holes cannot be self-aligned to thegate electrodes, the design value for the distance m between the contactholes and the gate electrodes can be made smaller than in thesemiconductor device manufacturing method according to the firstpreferred embodiment. Thus, the memory-forming region and thelogic-forming region can be reduced in dimension. This results in areduction in the dimensions of the semiconductor device as compared withthose in the first preferred embodiment.

Next, the semiconductor device manufacturing method according to thefourth preferred embodiment of the present invention, which isassociated with the second preferred embodiment, will be described withreference to FIGS. 22 through 26.

First, the structure shown in FIG. 42 is formed by using thepreviously-described conventional semiconductor device manufacturingmethod.

Then, as shown in FIG. 22, the insulating layer 19 and the contact holes15, 65 are formed according to the manufacturing method identical tothat in the aforementioned second preferred embodiment. Although notshown, contact holes which extend to the cobalt silicide films 12 on thegate electrodes 6 and 56 are also formed in the insulating layer 19,simultaneously with the contact holes 15 and 16.

Then, an insulation film of, for example, silicon nitride film is formedover the entire surface and anisotropically etched from the uppersurface. Thereby, as shown in FIG. 23, the insulation films 35 areformed on the side surfaces of the contact holes 15 and 16 and thecontact holes (not shown) located above the gate electrodes 6 and 56.

Then, as shown in FIG. 24, the contact plugs 16 are formed to fill inthe contact holes 15 and the contact plugs 66 are formed to fill in thecontact holes 65. The contact plugs 16 are electrically connectedthrough the cobalt silicide films 12 to the semiconductor substrate 1 inthe logic-forming region, and their upper surfaces are exposed from thestopper film 17. The contact plugs 66 are electrically connected throughthe cobalt silicide films 12 to the semiconductor substrate 1 in thememory-forming region, and their upper surfaces are exposed from thestopper film 17. Hereinbelow, concrete expression is given to a methodof forming the contact plugs 16 and 66.

First, a multilayer film formed of a barrier metal layer of, forexample, titanium nitride and a high-melting metal layer of, forexample, titanium or tungsten is formed over the entire surface, withthe barrier metal layer under the high-melting metal layer. Then, themultilayer film on the upper surface of the stopper film 17 is removedby CMP. This forms the contact plugs 16 which fill in the contact holes15, and the contact plugs 66 which fill in the contact holes 65.Consequently, electrical connections are provided between thesource/drain regions 59 and the contact plugs 66 and between thesource/drain regions 9 and the contact plugs 16. In the formation of thecontact plugs 16 and 66, contact plugs which fill in the contact holesabove the gate electrodes 6 and 56 are also formed simultaneously. As aresult, the contact plugs which are electrically connected through thecobalt silicide films 12 to the gate electrodes 6 and 56 are formed inthe insulating layer 19.

Then, as shown in FIG. 25, the insulating layer 20 consisting of theinterlayer insulation film 18 is formed over the entire surface. Thatis, the insulating layer 20 is formed on the stopper film 17 of theinsulating layer 19 and the contact plugs 16 and 66.

Then, according to the manufacturing method identical to that in thesecond preferred embodiment, the openings 26, 69 and 86, the capacitors82, the insulating layers 23 and 28, the contact holes 24 and 74, thecontact plugs 25 and 75, the barrier metal layers 27 and 87, and thecopper interconnections 29 and 88 are formed. This results in thestructure shown in FIG. 26.

As above described, in the semiconductor device manufacturing methodaccording to the fourth preferred embodiment associated with the secondpreferred embodiment, the insulation films 35 are formed on the sidesurfaces of the contact holes 15 and 65 (see FIG. 23) and thereafter,the contact plugs 16 and 66 are formed to fill in the contact holes 15and 65, respectively (see FIG. 24). Therefore, for the same reason asabove described, the semiconductor device can be made smaller indimension than in the manufacturing method according to the secondpreferred embodiment.

Next, the semiconductor device manufacturing method according to thefourth preferred embodiment of the present invention, which isassociated with the third preferred embodiment, will be described withreference to FIGS. 27 and 28.

First, the structure shown in FIG. 19 is formed according to theaforementioned manufacturing method. Then, as shown in FIG. 27, theinsulating layer 20 consisting of the interlayer insulation film 18 isformed over the entire surface. That is, the insulating layer 20 isformed on the insulating layer 19 and the contact plugs 16 and 66.

Then, a photoresist (not shown) having a predetermined opening patternis formed on the insulating layer 20, and using the photoresist as amask, the insulating layer 20 is removed by etching. The photoresist isthen removed. The etching at this time adopts anisotropic dry etchingusing a gas mixture of C₅F₈, O₂ and Ar. Thereby, the openings 69 areformed in the insulating layer 20 to expose the contact plugs 16 whichare each electrically connected to one of the adjacent source/drainregions 59.

Then, according to the manufacturing method identical to that in theaforementioned third preferred embodiment, the capacitors 82, theinsulating layers 23 and 28, the contact holes 24 and 74, the contactplugs 25 and 75, the openings 26 and 86, the barrier metal layers 27 and87, and the copper interconnections 29 and 88 are formed. This resultsin the structure shown in FIG. 28.

As above described, in the semiconductor device manufacturing methodaccording to the fourth preferred embodiment associated with the thirdpreferred embodiment, the insulation films 35 are formed on the sidesurfaces of the contact holes 15, 65 and thereafter, the contact plugs16 and 66 are formed to fill in the contact holes 15 and 65,respectively. Thus, for the same reason as above described, thesemiconductor device can be made smaller in dimension than in themanufacturing method according to the third preferred embodiment.

Fifth Preferred Embodiment

FIG. 29 is a cross-sectional view showing the structure of asemiconductor device according to a fifth preferred embodiment of thepresent invention. The semiconductor device according to the fifthpreferred embodiment is basically similar to that according to theaforementioned first preferred embodiment, except that contact plugs andcopper interconnections in the insulating layer 30 are formed integrallywith each other. Contact plugs 43, 93 and copper interconnections 44, 94shown in FIG. 29 correspond respectively to the contact plugs 25, 75 andthe copper interconnections 29, 88 in the first preferred embodiment.

As shown in FIG. 29, the semiconductor device according to the fifthpreferred embodiment comprises the semiconductor substrate 1, theinsulating layers 19 and 30, and the plurality of contact plugs 16 and66. The semiconductor device further comprises the capacitors 82, theplurality of contact plugs 43 and 93, and the copper interconnections 44and 94, all of which are formed in the insulating layer 30.

The contact plugs 43 are electrically connected through barrier metallayers 45 to the contact plugs 16, and the contact plugs 93 areelectrically connected through barrier metal layers 95 to the contactplugs 66 which are not in electrical contact with the capacitors 82. Thecontact plugs 43 and 93 are formed of copper. The contact plugs 43 andthe copper interconnections 44 are formed integrally with each other,and the contact plugs 93 and the copper interconnections 94 are formedintegrally with each other. The copper interconnections 94 are bit linesof the DRAM memory cells and located above the capacitors 82.

Thus, in the semiconductor device according to the fifth preferredembodiment, the contact plugs 43 and the copper interconnections 44, orthe contact plugs 93 and the copper interconnections 94 are formedintegrally with each other.

In the semiconductor device according to the aforementioned firstpreferred embodiment, as shown in FIG. 1, since the contact plugs 25 andthe copper interconnections 29, or the contact plugs 75 and the copperinterconnections 88 are formed separately, contact resistance isproduced between the contact plugs 25 and the copper interconnections 29or between the contact plugs 75 and the copper interconnections 88.Thus, it is not easy for the structure shown in FIG. 1 to handle arequirement of further reduction in electrical resistance between thecopper interconnections 29, 88 and the source/drain regions 9, 59.

In the semiconductor device according to the fifth preferred embodiment,on the other hand, since the contact plugs 43 and the copperinterconnections 44, or the contact plugs 93 and the copperinterconnections 94 are formed integrally with each other, there is noboundary between the contact plugs 43 and the copper interconnections 44and between the contact plugs 93 and the copper interconnections 94.Accordingly, no contact resistance is produced between the contact plugs43 and the copper interconnections 44 and between the contact plugs 93and the copper interconnections 94. Thus, the contact resistance can bereduced and it becomes possible to fully handle the requirement offurther reduction in electrical resistance between the copperinterconnections 44, 94 and the source/drain regions 9, 59.

Now, a method of manufacturing the semiconductor device shown in FIG. 29will be described. FIGS. 29 through 33 are cross-sectional views showinga sequence of process steps in the semiconductor device manufacturingmethod according to the fifth preferred embodiment. The semiconductordevice manufacturing method according to the fifth preferred embodimentis similar to that in the aforementioned first preferred embodiment,except that the contact holes 24 and 74, the contact plugs 25 and 75,the openings 26 and 86, the barrier metal layers 27 and 87 and thecopper interconnections 29 and 88 are replaced with contact holes 41 and91, the contact plugs 43 and 93, openings 42 and 92, the barrier metallayers 45 and 95 and the copper interconnections 44 and 94. Hereinbelow,the method of manufacturing the semiconductor device shown in FIG. 29 isdescribed with reference to FIGS. 29 through 33.

First, the structure shown in FIG. 48 is formed by using thepreviously-described conventional semiconductor device manufacturingmethod.

Then, as shown in FIG. 30, the insulating layers 23 and 28 are formed inthis order over the entire surface and planarized by, for example, CMP.Alternatively, the insulating layers 23 and 28 may be a singleinsulating layer and such a single insulating layer may be deposited ata time over the entire surface.

Then, as shown in FIG. 31, the contact holes 41 and 91 are formed in theinsulating layer 30. The contact holes 41 extend from the upper surfaceof the insulating layer 28 to the contact plugs 16, and the contactholes 91 extend from the upper surface of the insulating layer 28 to thecontact plugs 66 which are not in contact with the capacitors 82.

To form the contact holes 41 and 91, a photoresist (not shown) having apredetermined opening pattern is first formed on the insulating layer 28and, using the photoresist as a mask and the stopper film 17 as an etchstop, the insulating layers 23 and 28 and the interlayer insulation film18 are removed by etching. The etching at this time adopts anisotropicdry etching using a gas mixture of C₅F₈, O₂ and Ar. The photoresist isthen removed and the exposed stopper film 17 is also removed by etching.The etching at this time adopts anisotropic dry etching using a gasmixture of CHF₃, O₂ and Ar. This forms the contact holes 41 and 91 inthe insulating layer 30. Although not shown, contact holes which extendfrom the upper surfaces of the insulating layers 23 and 28 to the upperelectrodes 72 are also formed in the insulating layers 23 and 28,simultaneously with the contact holes 41 and 91.

Then, a resist 99 is applied to the entire surface to fill in thecontact holes 41 and 91. The resist 99, as shown in FIG. 32, is dryetched from its upper surface, and its upper part above the insulatinglayer 23 is removed.

Then, a photoresist (not shown) having a predetermined pattern is formedon the insulating layer 28 and, using the photoresist and the resist 99as masks, the insulating layer 28 is removed by etching. The photoresistand the resist 99 are then removed. Thereby, as shown in FIG. 33, theopenings 42 connected with the contact holes 41 and the openings 92connected with the contact holes 91 are formed in the insulating layer28.

Then, a barrier metal layer of, for example, tantalum nitride is formedover the entire surface and thereafter, a copper material is formed at atime on the insulating layer 28 to fill in the contact holes 41, 91 andthe openings 42, 92. Then, the barrier metal layer and the coppermaterial on the upper surface of the insulating layer 28 are removed by,for example, CMP. This completes the structure shown in FIG. 29, i.e.,forms the barrier metal layers 45 which cover the surfaces of thecontact holes 41 and the openings 42, the contact plugs 43 which fill inthe contact holes 41, and the copper interconnections 44 which fill inthe openings 42. At the same time, there are also formed the barriermetal layers 95 which cover the surfaces of the contact holes 91 and theopenings 92, the contact plugs 93 which fill in the contact holes 91,and the copper interconnections 94 which fill in the openings 92.

Thus, in the semiconductor device manufacturing method according to thefifth preferred embodiment, since the contact holes 41 and the openings42 are filled at one time with the copper material, the contact plugs 43and the copper interconnections 44 are formed at the same time.Similarly, since the contact holes 91 and the openings 92 are filled atone time with the copper material, the contact plugs 93 and the copperinterconnections 94 are formed at the same time.

In the aforementioned first preferred embodiment, on the other hand,after formation of the contact plugs 25 and 75, the openings 26 and 86are formed and thereafter, the copper interconnections 29 and 88 areformed. That is, the contact plugs 25 and the copper interconnections29, or the contact plugs 75 and the copper interconnections 88 areformed at different steps, i.e., they are not formed at the same time.

Thus, the semiconductor device manufacturing method according to thefifth preferred embodiment can reduce the number of manufacturing stepsand have excellent mass productivity, as compared with that according tothe first preferred embodiment in which the contact plugs and the copperinterconnections are formed at different steps.

In the semiconductor device manufacturing methods according to theaforementioned second through fourth preferred embodiments, the contactholes 24 and 74, the contact plugs 25 and 75, the openings 26 and 86,the barrier metal layers 27 and 87, and the copper interconnections 29and 88 may be replaced respectively with the contact holes 41 and 91,the contact plugs 43 and 93, the openings 42 and 92, the barrier metallayers 45 and 95, and the copper interconnections 44 and 94.

More specifically, in each of the second through fourth preferredembodiments, after formation of the capacitors 82, the insulating layers23 and 28 are formed in this order over the entire surface (see FIG. 30)and thereafter, the contact holes 41, 91 and the openings 42, 92 areformed according to the aforementioned manufacturing method (see FIGS.31 to 33). Then, a barrier metal layer is formed over the entire surfaceand a copper material is formed at one time on the insulating layer 28to fill in the contact holes 41, 92 and the openings 42, 92. After that,the barrier metal layer and the copper material on the upper surface ofthe insulating layer 28 are removed by, for example, CMP. This resultsin the structures shown in FIGS. 34 to 38. The structures shown in FIGS.34 and 35 correspond respectively to the second and third preferredembodiment. The structures shown in FIGS. 36 to 38 correspond to theexamples of the fourth preferred embodiment which are associatedrespectively with the first to third preferred embodiments.

By applying the inventive features of the fifth preferred embodiment tothe semiconductor device manufacturing methods according to theaforementioned second through fourth preferred embodiments, the effectas above described can be achieved in addition to the effects obtainedfrom the respective preferred embodiments.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention.

1. A semiconductor device comprising: a semiconductor substrate having afirst region where a memory device is formed and a second region where alogic device is formed; a first insulating layer formed on saidsemiconductor substrate; first and second contact plugs which areincluding a first high-melting metal, and formed in said firstinsulating layer to be electrically connected to said semiconductorsubstrate, in said first region and whose upper surfaces are exposedfrom said first insulating layer; a third contact plug which isincluding said first high-melting metal, and formed in said firstinsulating layer to be electrically connected to said semiconductorsubstrate in said second region and whose upper surface is exposed fromsaid first insulating layer; a second insulating layer formed over saidfirst insulating layer; a metal-insulator-metal capacitor having aelectrode including a second high-melting metal, and formed in saidsecond insulating layer to be electrically connected to said firstcontact plug; a fourth contact plug including said first high-meltingmetal, and formed in said second insulating layer to be electricallyconnected to said second contact plug; a fifth contact plug includingsaid first high-melting metal, and formed in said second insulting layerto be electrically connected to said third contact plug; a first copperinterconnection having a first barrier metal layer on a side surface andon a lower surface of said first copper interconnection, and formed insaid second insulating layer, to be electrically connected to saidfourth contact plug through said first barrier metal layer; and a secondcopper interconnection having a second barrier metal layer on a sidesurface and on a lower surface of said second copper interconnection,and formed in said second insulating layer, to be electrically connectedto said film contact plug through said second barrier metal layer;wherein said first copper interconnection is a bit line of said memorydevice and located above said capacitor.
 2. The semiconductor deviceaccording to claim 1, further comprising: first and second source/drainregion formed in an upper surface of said semiconductor substrate insaid first region, with a predetermined distance from each other; thirdand fourth source/drain regions formed in an upper surface of saidsemiconductor substrate in said second region, with a predetermineddistance from each other, a first gate structure including a first gateelectrode formed on said semiconductor substrate in said first regionbetween said first and second source/drain regions, and a second gatestructure including a second gate electrode formed on said semiconductorsubstrate in said second region between said third and fourthsource/drain regions, wherein said first and second gate electrodeinclude a polysilicon film and a first silicide film including ametallic element stacked in this order, wherein a second slicide filmincluding said metallic element is formed on each of said first throughfourth source/drain regions, wherein said first and second contact plugsare electrically connected to said first and second source/drain regionsthrough said first slicide film, respectively, and wherein said thirdcontact plugs are electrically connected to said third and fourthsource/drain regions through said second silicide film, respectively. 3.A semiconductor device comprising: a semiconductor substrate having afirst region where a memory device is formed and a second region where alogic device is formed; a first insulating layer formed on saidsemiconductor substrate; first and second contact plugs which areincluding a first high-melting metal, and formed in said firstinsulating layer to be electrically connected to said semiconductorsubstrate, in said first region and whose upper surfaces are exposedfrom said first insulating layer; a third contact plug which isincluding said high-melting metal, and formed in said first insulatinglayer to be electrically connected to said semiconductor substrate insaid second region and whose upper surface is exposed from said firstinsulating layer; a second insulating layer formed over said firstinsulating layer; a metal-insulator-metal capacitor having a electrodecontaining a second high-melting metal, and formed in said secondinsulating layer to be electrically connected to said first contactplug; a fourth contact plug including said first high-melting metal, andhaving a first barrier metal layer on a side surface and a lower surfaceof said fourth contact plug, and formed in said second insulating layerto be electrically connected to said second contact plug through saidfirst barrier metal layer; a fifth contact plug including said firsthigh-melting metal, and having a second barrier metal layer on a sidesurface and a lower surface of said fourth contact plug, and formed insaid second insulating layer to be electrically connected to said thirdcontact plug thorough said second barrier metal layer; a first copperinterconnection having a third barrier metal layer on a side surface anda lower surface of said first copper interconnection and formed in saidsecond insulating layer to be electrically connected to said fourthcontact plug; and a second copper interconnection having a fourthbarrier metal layer on a side surface and a lower surface of said secondcopper interconnection, and formed in said second insulating layer to beelectrically connected to said fifth contact plug; wherein said firstcopper interconnection is a bit line of said memory device and locatedabove said capacitor, wherein said fourth and fifth contact plugs eachare formed of copper, said first copper interconnection and said fourthcontact plug are formed integrally with each other, and said secondcopper interconnection and said fifth contact plug are formed integrallywith each other.
 4. The semiconductor device according to claim 3,further comprising: a first and second source/drain regions formed in anupper surface of said semiconductor substrate in said first region, witha predetermined distance from each other; third and fourth source/drainregions formed in an upper surface of said semiconductor substrate insaid second region, with a predetermined distance from each other, afirst gate structure including a first gate electrode formed on saidsemiconductor substrate in said first region between said first andsecond source/drain regions, and a second gate structure including asecond gate electrode formed on said semiconductor substrate in saidsecond region between said third and fourth source/drain regions,wherein said first and second gate electrode including a polysiliconfilm and a first silicide film including a metallic element stacked inthis order, wherein a second silicide film including said metallicelement is formed on each of said first through fourth source/drainregions, wherein said first and second contact plugs are electricallyconnected to said first and second source/drain regions through saidfirst slicide film, respectively, and wherein said third contact plugsare electrically connected to said third and fourth source/drain regionsthrough said second silicide film, respectively.